Masked Energy-Filtered Monte Carlo Simulation
A simulation tool kit called EFIIS© (Energy Filtered Ion Implantation Simulator) has been developed which allows to investigate the exact shape of 3-dimensional doping structures. EFIIS© is based on the ion implantation Monte-Carlo simulator GEANT4. Any desired setup of ion beams, energy-filter designs, mask designs etc. can be tested. EFIIS© allows for exact characterization of lateral and vertical doping profiles. The simulation results can be imported into TCAD software to provide for device simulation which are as accurate as possible.