Our Business
Energy-Filtered Ion Implantation
We’re developing and supplying a highly innovative tool for manufacturing efficient power semiconductor microchips.
Our Energy-Filter has been specially developed for doping new microchips made of silicon carbide (SiC), a material that represents a huge technological leap for wind power, photovoltaics and electromobility. Our technology enables novel designs, reduces costs and increases the performance and yield of microchips.
Energy-Filtered Ion Implantation
Technology Innovation for precise doping
Using an Energy-Filter for Ion Implantation (EFII©) enables conversion of a monoenergetic ion beam to that with a continuous energy spectrum, thereby enabling depth-distributed and highly homogeneous doping.
Conventional Ion Implantation
The conventional method only permits a Gaussian distribution with no deep drive-in.
Energy-Filtered Ion Implantation
Our technology facilitates both depth-distributed box & customized doping profiles.
