SiC-Wafer

Monoenergetic
Ion Beam

Triangular shaped
silicon as filter structure

Energy-filtered
Ion Beam

Our innovative energy filter technology enables
novel designs, reduces costs & increases the
performance and yield of your microchips.

We make our contribution to highly efficient
wind power, photovoltaics & electromobility
for a sustainable future.

Supported by

Technology

Technoloy Innovation …

Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.

… for highly precise Doping

The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.

Advantages

Personal Advice

Excellent Homogeneity

Chip Cost Reduction

Excellent Reproducibility

Chip Performance Increase

Free Choice of Dopants

Chip Size Shrink Potential

High Wafer Throughput

Customized Dopant Profiles

SiC Superjunction Structures

Chain implant Energy Filter technology
Necessary ion energies Many different energies
necessary
Only one single ion energy
Number of necessary
accelerators
Several, due to high variability
from keV to several MeV
Only one, since only a single
MeV energy necessary
Depth profile quality No completely homogenous
doping profile achievable
Highly homogeneous
Process control and
wafer logistics
Complicated and highly
error-prone
Robust and straight-forward
Total implantation time High implantation time due to
energy adjustment
Significantly reduced
implantation time
Implantation cost High cost Reduced cost

Products & Services

Meet Our Team

M.Sc. Florian KrippendorfChief Executive Officer
M.Eng. Benjamin TomChief Financial Officer
M.Sc. Constantin CsatoApplication and Analysis
Prof. Dr. Michael RübStrategy and R&D
M.Eng. Stefan IllhardtDevelopment
B.Eng. André ZowallaDevelopment
M.A. Luisa RudolphManagement Assistance