Energy-Filter

Our highly innovative Energy-Filter (EFII©)
technology enables novel designs, reduces costs &
increases the performance and yield of your microchips.

We make our contribution to highly
efficient wind power, photovoltaics &
electromobility for a sustainable future.

Supported by

For Ion Implantation

TECHNOLOGY

Technoloy Innovation …

Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.

… for highly precise Doping

The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.

ADVANTAGES

CHAIN IMPLANT

EFII©

NECESSARY ION ENERGIES

Several different energies necessary

Only a single ion energy

NUMBER OF NECESSARY
ACCELERATORS

Several, owing to high variability from few keV to several MeV

Only one, since only a single MeV energy necessary

DEPTH PROFILE QUALITY

No entirely homogenous doping profile
possible

Highly homogeneous

PROCESS CONTROL AND
WAFER LOGISTICS

Complicated and highly error-prone

Robust, straight-forward and reliable

TOTAL IMPLANTATION TIME

High implantation time due to energy
adjustment

Significantly reduced implantation time

IMPLANTATION COST

High cost

Reduced cost

PRODUCTS & SERVICES

Aluminium-Box

Nitrogen-Box

Special Doping Tasks

Special parameter sets are available on request.

Masked Energy-Filtered Monte Carlo Simulation

A simulation tool kit called EFIIS© (Energy Filtered Ion Implantation Simulator) has been developed which allows to investigate the exact shape of 3-dimensional doping structures. EFIIS© is based on the ion implantation Monte-Carlo simulator GEANT4. Any desired setup of ion beams, energy-filter designs, mask designs etc. can be tested. EFIIS© allows for exact characterization of lateral and vertical doping profiles. The simulation results can be imported into TCAD software to provide for device simulation which are as accurate as possible.