Ion Beam

Triangular shaped
silicon as filter structure

Ion Beam

Our innovative energy filter technology enables
novel designs, reduces costs & increases the
performance and yield of your microchips.

We make our contribution to highly efficient
wind power, photovoltaics & electromobility
for a sustainable future.

Supported by


Technoloy Innovation …

Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.

… for highly precise Doping

The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.


Personal Advice

Excellent Homogeneity

Chip Cost Reduction

Excellent Reproducibility

Chip Performance Increase

Free Choice of Dopants

Chip Size Shrink Potential

High Wafer Throughput

Customized Dopant Profiles

SiC Superjunction Structures

Products & Services

Meet Our Team

M.Sc. Florian KrippendorfChief Executive Officer
M.Eng. Benjamin TomChief Financial Officer
M.Sc. Constantin CsatoApplication and Analysis
Prof. Dr. Michael RübStrategy and R&D
M.Eng. Stefan IllhardtDevelopment
B.Eng. André ZowallaDevelopment
M.A. Luisa RudolphManagement Assistance