silicon as filter structure
Our innovative energy filter technology enables
novel designs, reduces costs & increases the
performance and yield of your microchips.
We make our contribution to highly efficient
wind power, photovoltaics & electromobility
for a sustainable future.
Technoloy Innovation …
Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.
… for highly precise Doping
The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.
Chip Cost Reduction
Chip Performance Increase
Free Choice of Dopants
Chip Size Shrink Potential
High Wafer Throughput
Customized Dopant Profiles
SiC Superjunction Structures
|Chain implant||Energy Filter technology|
|Necessary ion energies||Many different energies
|Only one single ion energy|
|Number of necessary
|Several, due to high variability
from keV to several MeV
|Only one, since only a single
MeV energy necessary
|Depth profile quality||No completely homogenous
doping profile achievable
|Process control and
|Complicated and highly
|Robust and straight-forward|
|Total implantation time||High implantation time due to
|Implantation cost||High cost||Reduced cost|