SiC-Wafer

Monoenergetic
Ion Beam

Triangular shaped
silicon as filter structure

Energy-filtered
Ion Beam

Our innovative energy filter technology enables
novel designs, reduces costs & increases the
performance and yield of your microchips.

We make our contribution to highly efficient
wind power, photovoltaics & electromobility
for a sustainable future.

Supported by

Technology

Technoloy Innovation …

Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.

… for highly precise Doping

The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.

ADVANTAGES

Chip Cost Reduction

Chip Performance Increase

Chip Size Shrink Potential

Customized Dopant Profiles

Enable SiC Superjunction Structures

Excellent Homogeneity

Excellent Reproducibility

High Wafer Throughput

Professional Advice & Support

Products & Services

Meet Our Team

M.Sc. Florian KrippendorfProduction and Technology, CEO
M.Eng. Benjamin TomBusiness Administration, CFO
M.Sc. Constantin CsatoApplication and Analysis
Prof. Dr. Michael RübStrategy, R&D
M.Eng. Stefan IllhardtDevelopment
B.Eng. André ZowallaDevelopment
M.A. Luisa RudolphManagement Assistance