SIC EPI DOPING

Highly Precise Technology

Our technology guarantees high precision epi layer doping and improved thickness uniformity. Chip manufacturers are guaranteed higher device yield and quality alongside substantially improved cost efficiency.

SI IGBT FIELD STOP

Advantages & Properties

mi2-factory offers customers unprecedented flexibility in lifetime management. Our EFII© technology enables continuous hydrogen-donor (HD) related n-doping.

Benefits

Enabling Si IGBT performance increase

  • Improved electric field distribution

  • Optimized field stop for reduced static and dynamic losses

SIC DIODE DRIFT ZONE

Advantages & Properties

Our cutting-edge EFII© technology provides exceptional n-type drift zone doping for 600V-1200V SiC power devices. We recommend using undoped epitaxial layer formation followed by the EFII© process to manufacture n-type drift zones. This method will help realize previoulsy unattained levels of doping uniformity (3%). Positive side effect: Deposition of undoped SiC epitaxial layers leads to improved thickness uniformity.

Benefits

mi2-factory‘s blanket Nitrogen-EFII© process results in drift-zone doping with highly augmented accuracy:

  • Tighter distributions of forward voltage drop and breakdown voltage

  • Potential chip shrink of over 30% for 1200V MPS diodes

  • Direct cost benefit for MPS diodes and MOSFETs

Applications

SiC Schottky diodes:

  • 600V / 650V

  • 1200V

  • Shrink and yield

Proof Of Our Technology

Our test vehicle – the 650V SiC MPS diode from Infineon Technologies – has provided robust and compelling proof of the EFII© technology‘s succesful translation to and suitability for commercial settings and applications.

Packaged Chip Data

Differential Resistance

Blocking Voltage

Leakage Current

Result

The IQR/median value of packaged diodes is much smaller for EFII© chips than for conventional chips (data from joint project IFX-mi2-factory, 2015). Forward characteristics up to 10x 12A.

Alternative highly homogenous drift layer doping for 650 V SiC devices
(R. Rupp et al, Materials Science Forum, ISSN: 1662-9760, Vol. 858, pp 531-534)

SIC SUPERJUNCTION MOSFET

Enabling SiC Superjunction Structures

1200V SiC superjunction (SJ) MOSFETs are superior in cost-performance
compared to conventional MOSFETs. But how to manufacture a SJ structure in SiC?

Our approach: Multiepitaxy with masked EFII© p- and n-implant.

Our technology enables specialized implantation and undoped epi regrowth.

Active chip area reduction afforded by SiC SJ MOSFET relative to conventional SiC MOSFET

Applications