SIC EPI DOPING
Highly Precise Technology
Our technology guarantees high precision epi layer doping and improved thickness uniformity. Chip manufacturers are guaranteed higher device yield and quality alongside substantially improved cost efficiency.
SI IGBT FIELD STOP
Advantages & Properties
mi2-factory offers customers unprecedented flexibility in lifetime management. Our EFII© technology enables continuous hydrogen-donor (HD) related n-doping.
Benefits
Enabling Si IGBT performance increase
-
Improved electric field distribution
-
Optimized field stop for reduced static and dynamic losses
SIC DIODE DRIFT ZONE
Advantages & Properties
Our cutting-edge EFII© technology provides exceptional n-type drift zone doping for 600V-1200V SiC power devices. We recommend using undoped epitaxial layer formation followed by the EFII© process to manufacture n-type drift zones. This method will help realize previoulsy unattained levels of doping uniformity (3%). Positive side effect: Deposition of undoped SiC epitaxial layers leads to improved thickness uniformity.
Benefits
mi2-factory‘s blanket Nitrogen-EFII© process results in drift-zone doping with highly augmented accuracy:
-
Tighter distributions of forward voltage drop and breakdown voltage
-
Potential chip shrink of over 30% for 1200V MPS diodes
-
Direct cost benefit for MPS diodes and MOSFETs
Applications
SiC Schottky diodes:
-
600V / 650V
-
1200V
-
Shrink and yield