Your innovative company
for manufacturing
Silicon Carbide
Our Business
Energy-Filtered Ion Implantation
We’re developing and supplying a highly innovative tool for manufacturing efficient power semiconductor microchips.
Our Energy-Filter has been specially developed for doping new microchips made of silicon carbide (SiC), a material that represents a huge technological leap for wind power, photovoltaics and electromobility. Our technology enables novel designs, reduces costs and increases the performance and yield of microchips.
Energy-Filtered Ion Implantation
Technology Innovation for precise doping
Using an Energy-Filter for Ion Implantation (EFII©) enables conversion of a monoenergetic ion beam to that with a continuous energy spectrum, thereby enabling depth-distributed and highly homogeneous doping.
Conventional Ion Implantation
The conventional method only permits a Gaussian distribution with no deep drive-in.
Energy-Filtered Ion Implantation
Our technology facilitates both depth-distributed box & customized doping profiles.
Processing SiC Power Microchips
The Energy-Filter technology revolutionizes the manufacturing of power microchips by eliminating the need for conventional, complex and time-consuming ion implantation processes. Thus enabling faster process time, higher throughput and maintaining accurate doping homogeneity from wafer to wafer.
Your Benefits
Our experience … your benefits
The Energy-Filter technology enables the following for your microchips:
cost reduction
design innovation
performance boost
Chip Cost Reduction
High Wafer Throughput
Excellent Reproducibility
Chip Size Shrink Potential
Chip Performance Increase
Excellent Doping Homogeneity
+8
national patents granted
+6
national patents pending
+15
international patents granted
+25
international patents pending
Management Team
Prof. Dr. Michael Rüb
CEO & Managing Director
M.Eng. Benjamin Tom
CFO & Managing Director
