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Our Technoloy Innovation

The Energy Filter for ion implantation is a novel technique which allows to transform the energy distribution of a mono-energetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.

Our Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.

Why choose Energy Filter technology?

The Energy Filter technology has major advantages over conventional technologies!

Chip Cost Reduction

Chip Performance Increase

Customized Dopant Profile

Chip Size Shrink Potential

High Dopant Homogeniety

New Device Architectures

High Wafer Throughput

Advice & Support

Products & Services

We offer high energy ion implantation and EFII-technology based implantation services. We would like to encourage customers to request their individual implantation profiles.

Our Team

M.Sc. Florian Krippendorf
M.Sc. Florian KrippendorfChief Executive Officer
M.Eng. Benjamin Tom
M.Eng. Benjamin TomChief Financial Officer
M.Sc. Constantin Csato
M.Sc. Constantin CsatoApplication and Analysis
Prof. Dr. Michael Rüb
Prof. Dr. Michael RübStrategy and R&D
M.Eng. Stefan Illhardt
M.Eng. Stefan IllhardtDevelopment Engineer
B.Eng. André Zowalla
B.Eng. André ZowallaDesign Engineer
Lidia Scheuermann
Lidia ScheuermannManagement Assistance

Get In Touch

Contact Information

Moritz-von-Rohr-Straße 1A

07745  Jena, Germany

+49 3641 2719321

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