The Energy Filter for ion implantation is a novel technique which allows to transform the energy distribution of a mono-energetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.
Our Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.
Why Choose Energy Filter Technology?
We enable cost reduction, design innovation & performance boost for your microchips.
Advice & Support
Chip Cost Reduction
Chip Performance Increase
Free Choice of Dopants
Chip Size Shrink Potential
High Wafer Throughput
Customized Dopant Profiles
SiC Superjunction Structures
Products & Services
We offer high energy ion implantation and EFII-technology based implantation services. We would like to encourage customers to request their individual implantation profiles.
Fundamentals of our quality politics
compliance with legal requirements
satisfied employees & competent managers
obligation of the management to live the quality management system in all spheres of the company