Our Energy Filter allows to transform the energy distribution of a monoenergetic ion beam in such a way, that any desired dopant profile can be created. Dopant profiles, formerly impossible to be manufactured with reasonable technological effort, are now achievable with only one implantation step.
… for highly precise Doping
The Energy Filter principle is based on the transmission of accelerated ions through a micro-patterned thin silicon membrane. Ions lose kinetic energy within the Energy Filter. Due to the different path lengths in the Energy Filter the implantation profile in the substrate is transformed from a Gaussian implantation peak into a (in the depicted case) rectangular (homogeneous) dopant profile.