SiC Superjunction MOSFET

A powerful technology for your powerful SJ-MOSFETs.

SJ-MOSFETs

less than

3%

concentration variation

SiC SJ-MOSFET

A powerful technology
for your powerful devices.

SJ-MOSFETs

less than

3%

concentration variation

How to realize superjunction structures in silicon carbide?

Our Approach

Multiepitaxy with masked EFII© p- and n-implant. The Energy-Filter
Technology enables specialized implantation and undoped epi regrowth.

How to realize superjunction
structures in silicon carbide?

Our Approach

Multiepitaxy with masked EFII© p- and n-implant.
The Energy-Filter Technology enables specialized
implantation and undoped epi regrowth.

Active chip area reduction afforded by SiC SJ MOSFET relative to conventional SiC MOSFET