SiC Diode Drift Zone

Doping with highly augmented accuracy.

Our cutting-edge EFII© technology provides exceptional
n-type drift zone doping for 600V-1200V SiC power devices.

We recommend using undoped epitaxial layer formation followed
by the EFII© process to manufacture n-type drift zones. This method
will help to realize previoulsy unattained levels of doping uniformity.

SiC Diode Drift Zone

Doping with highly augmented accuracy.

Our cutting-edge EFII© technology
provides exceptional n-type drift zone
doping for 600V-1200V SiC power devices.

We recommend using undoped
epitaxial layer formation followed by
the EFII© process to manufacture n-type
drift zones. This method will help to realize
previoulsy unattained levels of doping uniformity.

Advantages & Benefits

mi2-factory‘s blanket Nitrogen-EFII© process results
in drift-zone doping with highly augmented accuracy:

direct cost benefit for MPS diodes and MOSFETs
potential chip shrink of over 30% for 1200V MPS diodes
tighter distributions of forward voltage drop and breakdown voltage

up to

4x

higher chip yield

more than

30%

chip shrink potential

less than

3%

depth range variation

doping inhomogeneity

less than

3%

Advantages & Benefits

Our blanket Nitrogen-EFII© process results in
drift-zone doping with highly augmented accuracy:

direct cost benefit for MPS diodes and MOSFETs
potential chip shrink of over 30% for 1200V MPS diodes
tighter distributions of forward voltage drop and breakdown voltage

up to

4x

higher chip yield

more than

30%

chip shrink potential

less than

3%

depth range variation

less than

3%

doping inhomogeneity

Proof of our technology

Our test vehicle - the 650V SiC MPS diode from Infineon Technologies -
has provided robust and compelling proof of the EFII© technology‘s succesful
translation to and suitability for commercial settings and applications.

Results from packaged chip data

The IQR/median value of packaged diodes is much smaller for chips processed
with EFII© than for conventional chips*. Forward characteristics up to 10x 12A.

*data from joint project IFX-mi2-factory, 2015

Alternative highly homogenous drift layer doping for 650 V SiC devices (R. Rupp et al, Materials Science Forum, ISSN: 1662-9760 Vol. 858, pp 531-534)

Proof of our technology

Our test vehicle - the 650V SiC MPS diode from
Infineon Technologies - has provided robust and
compelling proof of the EFII© technology‘s succesful
translation to and suitability for commercial settings
and applications.

Results from packaged chip data

The IQR/median value of packaged diodes
is much smaller for chips processed with EFII©
than for conventional chips*. Forward characteristics
up to 10x 12A.

*data from joint project IFX-mi2-factory, 2015

Alternative highly homogenous drift layer doping for 650 V SiC devices
(R. Rupp et al, Materials Science Forum, ISSN: 1662-9760 Vol. 858, pp 531-534)

Leakage Current

EFII© processed chips

Conventional processed chips

Blocking Voltage

EFII© processed chips

Conventional processed chips

Differential Resistance

EFII© processed chips

Conventional processed chips