We are confident that interest in our technology will grow. The SiC super-junction is destined to deliver a hike in power-transistor efficiency, and our energy filter for ion-implantation technology is a key enabling technology for the production of these devices. Other diodes and transistors will also benefit from our approach to doping, with the greater accuracy provided by our technology enabling a trimming of dimensions, leading to significant cost savings.

Read more: https://compoundsemiconductor.net/article/106962/Addressing_production_of_SiC_super-junction_MOSFETs/feature